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| SPICE MODEL: 2N7002V/VA 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 3) D G BC A NEW PRODUCT SOT-563 Dim A B C D G H SEE NOTE 1 K M H Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11 Mechanical Data * * * * * * * * Case: SOT-563 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) S2 G2 D2 K L M L S1 D2 All Dimensions in mm S1 G1 G1 D1 G2 S2 D1 2N7002V (KAS Marking Code) 2N7002VA (KAY Marking Code) Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 60 60 20 40 280 1.5 150 833 -55 to +150 Units V V V mA A mW C/W C Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage (Note 3) Drain Current (Note 3) Drain Current (Note 3) Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added Lead. DS30448 Rev. 3 - 2 1 of 3 www.diodes.com 2N7002V/VA a Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Satic Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 1.0 3/4 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 3/4 3/4 1.0 3/4 3/4 3/4 3/4 3/4 3/4 Max 3/4 1.0 500 100 2.5 7.5 13.5 3/4 3/4 50 25 5.0 20 20 Unit V A nA V W A mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 5V, ID = 0.05A, VGS = 10V, ID = 0.5A, Tj = 125C VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ordering Information (Note 5) Device 2N7002V-7 2N7002VA-7 Notes: Packaging SOT-563 SOT-563 Shipping 3000/Tape & Reel 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 KAS YM S2 G2 D1 KAS = 2N7002V Product Type Marking Code (See Note 1) YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September D2 S1 G1 KAY YM G2 S2 D1 KAY = 2N7002VA Product Type Marking Code (See Note 1) YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30448 Rev. 3 - 2 2 of 3 www.diodes.com 2N7002V/VA 250 NEW PRODUCT Pd, POWER DISSIPATION (mW) 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (C) Fig. 1, Derating Curve - Total DS30448 Rev. 3 - 2 3 of 3 www.diodes.com 2N7002V/VA |
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